VBEsat base-emitter saturation voltage IC = 10 mA IB = 0.5 mA note 1 − 700 − mV VCEsat collector-emitter saturationvoltage HFE DC current gain IC = 10 ♚ VCE = 5 V see Figs 2, 3 and 4BC546A − 90 −ĭC current gain IC = 2 mA VCE = 5 V see Figs 2, 3 and 4BC546A 110 180 220 IEBO emitter cut-off current IC = 0 VEB = 5 V − − 100 nA ICBO collector cut-off current IE = 0 VCB = 30 V − − 15 nA Rth j-a thermal resistance from junction to ambient note 1 0.25 K/mW VBE decreases by about 2 mV/K with increasing temperature. VBEsat decreases by about 1.7 mV/K with increasing temperature.Ģ. Tstg storage temperature −65 +150 ☌Tj junction temperature − 150 ☌Tamb operating ambient temperature −65 +150 ☌ĬHARACTERISTICSTj = 25 ☌ unless otherwise specified.ġ. Ptot total power dissipation Tamb ≤ 25 ☌ note 1 − 500 mW Transistor mounted on an FR4 printed-circuit board. LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).ġ. NPN transistor in a TO-92 SOT54 plastic package.PNP complements: BC556 and BC557.įig.1 Simplified outline (TO-92 SOT54)and symbol. General purpose switching and amplification.NPN general purpose transistors BC546 BC547 Philips Semiconductors Product specification
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